PART |
Description |
Maker |
MMZ09312BT1 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor
|
MMG3001NT112 |
Heterojunction Bipolar Transistor
|
Freescale Semiconductor, Inc
|
MMA20312B MMA20312B-12 |
Heterojunction Bipolar Transistor Technology
|
Freescale Semiconductor...
|
MMG3008NT1 |
Heterojunction Bipolar Transistor(InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3007NT1 |
Heterojunction Bipolar Transistor(InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3012NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor...
|
MT3S111P |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
TOSHIBA
|
MMG3004NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
FREESCALE[Freescale Semiconductor, Inc]
|
MMG3004NT1 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor...
|
MMG3006NT1 MMG3006NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MMG3014NT108 |
Heterojunction Bipolar Transistor Technology (InGaP HBT)
|
Freescale Semiconductor, Inc
|
MT3S111TU |
Radio-frequency SiGe Heterojunction Bipolar Transistor
|
Toshiba, Corp.
|